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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF245 VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES * High power gain * Low noise figure * Easy power control * Good thermal stability * Withstands full load mismatch.
g
MBB072
BLF245
PIN CONFIGURATION
lfpage
1
4 d
s
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION
2 3
MSB057
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 VDS (V) 28 PL (W) 30 Gp (dB) > 13 D (%) > 50
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C VGS = 0 VDS = 0 CONDITIONS - - - - -65 - MIN.
BLF245
MAX. 65 20 6 68 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Tmb = 25 C; Ptot = 68 W Tmb = 25 C; Ptot = 68 W THERMAL RESISTANCE 2.6 K/W 0.3 K/W
handbook, halfpage
10
MRA921
handbook, halfpage
100
MGP167
Ptot (W)
ID (A)
(1)
(2)
80
60 1 40
(2)
(1)
20
10-1 1
10
VDS (V)
102
0 0 40 80 120 Th (C) 160
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS gfs RDS(on) IDSX Cis Cos Crs F PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched devices forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance noise figure (see Fig.14) CONDITIONS VGS = 0; ID = 10 mA VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 10 mA; VDS = 10 V ID = 10 mA; VDS = 10 V ID = 1.5 A; VDS = 10 V ID = 1.5 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 1.2 - - - - - TYP. - - - - - 1.9 0.4 10 125 75 7 2
BLF245
MAX. UNIT - 2 1 4.5 100 - 0.75 - - - - - V mA A V mV S A pF pF pF dB
input and output power matched for: - ID = 1 A; VDS = 28 V; PL = 30 W; R1 = 1 k; Th = 25 C; f = 175 MHz
handbook, halfpage
6 T.C. (mV/K) 4
MGP168
handbook, halfpage
12
MGP169
Tj = 25 C
ID (A) 8 125 C
2
0
-2 -4 -6 10
4
102
103
ID (mA)
104
0 0 10 VGS (V) 20
VDS = 10 V; valid for Tj = 25 to 125 C.
VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
handbook, halfpage
0.8
MGP170
handbook, halfpage
240
MGP171
RDS(on) () 0.6
C (pF) 200
160 0.4 120 0.2 80 Cis
Cos
0 0 40 80 120 Tj (C) 160
40 0 10 20 30 VDS (V) 40
VGS = 10 V; ID = 1.5 A.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
20
MRA920
Crs (pF)
10
0 0 10 20 VDS (V) 30
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 C; Rth mb-h = 0.3 K/W; R1 = 1 k. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 175 175 Note 1. R1 included. Ruggedness in class-B operation The BLF245 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: Th = 25 C; Rth mb-h = 0.3 K/W; at rated load power. VDS (V) 28 12.5 IDQ (mA) 50 50 PL (W) 30 12 GP (dB) > 13 typ. 15.5 typ. 12 D (%) < 50 typ. 67 typ. 66 Zi () (note 1) 2.0 - j2.7 2.4 - j2.5
BLF245
ZL () 3.9 + j4.4 3.8 + j1.3
handbook, halfpage
20
MGP172
100 D (%)
handbook, halfpage
Gp (dB)
Gp D
60 PL (W) 50
MEA736
40 10 50 30
20
0 10 20 30 40 PL (W) 50
0
10 0 0.6 1.2 1.8 PIN (W) Class-B operation; VDS = 28 V; IDQ = 50 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W. 2.4
Class-B operation; VDS = 28 V; IDQ = 50 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
handbook, halfpage
20
MGP173
100 D (%)
handbook, halfpage
20
MEA737
Gp (dB) D Gp 10
PL (W)
50
10
0 0 10 PL (W) 20
0
0 0 0.6 1.2 1.8 PIN (W) Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W. 2.4
Class-B operation; VDS = 12.5 V; IDQ = 50 mA; f = 175 MHz; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.11 Power gain and efficiency as functions of load power, typical values.
Fig.12 Load power as a function of input power, typical values.
handbook, full pagewidth
C7 Zi C9 D.U.T. L2 L3 L6 C8 C10 C2 R1 C3 C5 R2 C4 L5 +VGG +VDD C6 R3 L4 50 output
50 input
C1
L1
MGP174
f = 175 MHz.
Fig.13 Test circuit for class-B operation.
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
List of components (class-B test circuit) COMPONENT C1 C2, C8 C3 C4, C6 C5 C7 C9 C10 L1 DESCRIPTION film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor ceramic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) 3 turns enamelled 0.5 mm copper wire stripline (note 2) 6 turns enamelled 1.5 mm copper wire grade 3B Ferroxcube RF choke 2 turns enamelled 1.5 mm copper wire metal film resistor metal film resistor metal film resistor 24.5 nH length 4 mm int. dia. 5 mm leads 2 x 2 mm VALUE 4 to 40 pF 5 to 60 pF 100 pF 100 nF 100 pF 18 pF 27 pF 24 pF 13.5 nH length 3.5 mm int. dia. 2 mm leads 2 x 2 mm 10 x 6 mm length 12.5 mm int. dia. 5 mm leads 2 x 2 mm DIMENSIONS
BLF245
CATALOGUE NO. 2222 809 07008 2222 809 07011 2222 854 13101 2222 852 47104 2222 680 10101
L2, L3 L4
30 98 nH
L5 L6
4312 020 36640
R1 R2 R3 Notes
1 k 1 M 10
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are mounted on a double copper-clad PCB with epoxy fibre-glass dielectric (r = 4.5), thickness 116 inch.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
135
handbook, full pagewidth
copper straps rivets
72
copper strap
copper straps
+VGG C3 R2 L4 C1 C2 R1 L1 L2 L3 L6 C4 C5
L5
+VDD
C6 R3 C8 C7 C9 C10
MGP175
The circuit and components are situated on one side of the epoxy fiber-glass board; the other side is unetched copper and serves as an earth. Earth connections are made by means of fixing screws, hollow rivets and copper straps under the sources and around the edges, to provide a direct contact between the copper on the component side and the ground plane. Dimensions in mm.
Fig.14 Component layout for 175 MHz class-B test circuit.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF245
handbook, halfpage
40
MGP177
handbook, halfpage
16
MGP178
Zi () 30
ZL () 12 RL
20 -xi 10 ri 0 20 40 60 80 100 120 f (MHz)
8
4
XL
0 20 40 60 80 100 120 f (MHz)
Class-B operation; VDS = 28 V; IDQ = 50 mA; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Class-B operation; VDS = 28 V; IDQ = 50 mA; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.15 Input impedance as a function of frequency (series components), typical values.
Fig.16 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage
40
MGP179
Gp (dB) 30
20
handbook, halfpage
10 Zi ZL
MBA379
0 20 40 60 80 100 120 f (MHz)
Class-B operation; VDS = 28 V; IDQ = 50 mA; PL = 30 W; Th = 25 C; Rth mb-h = 0.3 K/W.
Fig.17 Definition of MOS impedance.
Fig.18 Power gain as a function of frequency, typical values.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLF245
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
11
Philips Semiconductors
Product specification
VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF245
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
12

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